SQ2348ES features ?trenchfet ? power mosfet ? aec-q101 qualified c ?100 % r g and uis tested ? material categorization: for definitions of co mpliance please see notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) 30 r ds(on) ( ? ) at v gs = 10 v 0.024 r ds(on) ( ? ) at v gs = 4.5 v 0.032 i d (a) 8 configuration single d g s n-channel mosfet g s d top view SQ2348ES* * marking code: 8gxxx 2 3 to-236 (sot-23) 1 ordering information package sot-23 lead (pb)-free and ha logen-free SQ2348ES-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 8 a t c = 125 c 5.3 continuous source curr ent (diode conduction) i s 3.8 pulsed drain current a i dm 32 single pulse avalanche current l = 0.1 mh i as 15.5 single pulse avalanche energy e as 12 mj maximum power dissipation a t c = 25 c p d 3 w t c = 125 c 1 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 166 c/w junction-to-foot (drain) r thjf 50 product specification www.twtysemi.com 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 30 v - - 1 a v gs = 0 v v ds = 30 v, t j = 125 c - - 50 v gs = 0 v v ds = 30 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 10 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 12 a - 0.020 0.024 ? v gs = 10 v i d = 12 a, t j = 125 c - - 0.036 v gs = 10 v i d = 12 a, t j = 175 c - - 0.042 v gs = 4.5 v i d = 8 a - 0.026 0.032 forward transconductance b g fs v ds = 15 v, i d = 3 a - 10 - s dynamic b input capacitance c iss v gs = 0 v v ds = 15 v, f = 1 mhz - 430 540 pf output capacitance c oss - 100 125 reverse transfer capacitance c rss -4050 total gate charge c q g v gs = 10 v v ds = 15 v, i d = 5.5 a - 7.95 14.5 nc gate-source charge c q gs -1.6- gate-drain charge c q gd -1.3- gate resistance r g f = 1 mhz 8.65 17.3 27 ? turn-on delay time c t d(on) v dd = 15 v, r l = 3.4 ? i d ? 4.4 a, v gen = 10 v, r g = 1 ? -4.57 ns rise time c t r -812 turn-off delay time c t d(off) -2132 fall time c t f -69 source-drain diode ratings and characteristics b pulsed current a i sm --32a forward voltage v sd i f = 3.5 a, v gs = 0 v - 0.8 1.2 v SQ2348ES product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
